2SC3355-K-A

更新时间： 2024-09-25 13:00:59

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号双极晶体管射频小信号双极晶体管
页数	文件大小	规格书
8页	103K
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中文翻译

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2SC3355-K-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise

amplifier at VHF, UHF and CATV band.

PACKAGE DIMENSIONS

in millimeters (inches)

5.2 MAX.

(0.204 MAX.)

It has lange dynamic range and good current characteristic.

FEATURES

•

Low Noise and High Gain

NF = 1.1 dB TYP., G^a= 8.0 dB TYP. @V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

NF = 1.1 dB TYP., G^a= 9.0 dB TYP. @V^CE= 10 V, I^C= 40 mA, f = 1.0 GHz

High Power Gain

•

0.5

(0.02)

MAG = 11 dB TYP. @V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

1.27

(0.05)

2.54

(0.1)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

3.0

100

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

600

T^j

150

1. Base

2. Emitter

EIAJ : SC-43B

JEDEC: TO-92

3. Collector IEC

T^stg

65 to +150

: PA33

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

300

I^EBO

V^EB= 1.0 V, I^C= 0

h^FE

120

6.5

V^CE= 10 V, I^C= 20 mA

Gain Bandwidth Product

Output Capacitance

Insertion Power Gain

Noise Figure

f^T

GHz

V^CE= 10 V, I^C= 20 mA

C^ob

0.65

9.5

1.0

3.0

V^CB= 10 V, I^E= 0, f = 1.0 MHz

V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

V^CE= 10 V, I^C= 40 mA, f = 1.0 GHz

S^21e

1.1

Noise Figure

1.8

h^FEClassification

Class

Marking

h^FE

50 to 300

Document No. P10355EJ3V1DS00 (3rd edition)

Date Published March 1997 N

Printed in Japan

1985

12 3 4 5 6 7 8

中文翻译

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