Datasheet > 2SC3356

2SC3356

更新时间： 2024-11-14 17:01:07

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固锝 - GOOD-ARK		/
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4页	799K
描述
三极管

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数据手册

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2SC3356 数据手册

2SC3356

GOOD-ARK Electronics

SOT-23 Plastic-Encapsulate Transistors

Features

●

Low Noise and High Gain

High Power Gain

RoHS

COMPLIANT

High Stability and High Reliability

SOT-23

Marking:

According to hFE

Mechanical Data

●

SOT-23 Small Outline Plastic Package

Epoxy UL: 94V-0

Pin definition

Mounting Position: Any

Maximum Ratings & Electrical Characteristics(TA=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

V_CBO

V_CEO

V_EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter -Base Voltage

100

Collector Current-Continuous

I_C

200

Collector Power Dissipation

P_C

150

Operating junction temperature range

Storage temperature range

°C

-55-+150

625

T_STG

RθJA

Thermal Resistance from Junction to Ambient

℃/W

Electrical Specifications(TA=25℃ unless otherwise noted)

Limits

Parameter

Symbol

Test Conditions

Unit

Min

Typ

Max

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCB=10V, IE=0

VEB=1V, IC=0

Emitter cut-off current

IEBO

DC current gain

hFE(1)

VCE=10V, IC=20mA

IC=50mA, IB=5mA

250

Collector-emitter saturation voltage

Base -emitter saturation voltage

Transition frequency

VCE(sat)

0.3

VBE(sat)

1.15

IC=50mA, IB=5mA

VCE=10V, IC=20mA

MHz

Collector output capacitance

Noise figure

VCB=10V,IE=0,f=1MHZ

0.8

Cob

VCE=10V,IC=7mA,Rg=10kΩ,

f=1GHz

1.65

Classlslcatlon OF hFE(1)

RANGE

50-100

R23

80-160

R24

125-250

R25

MARKING

Doc.No.643141

www.goodark.com

12 3 4

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