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2SC3356

更新时间: 2024-11-13 12:53:39
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TYSEMI /
页数 文件大小 规格书
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描述
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz

2SC3356 数据手册

  
TTrraannssiissttIIooCCrrss  
Product specification  
2SC3356  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Low noise and high gain.  
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz  
High power gain.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
20  
Unit  
V
V
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Total power dissipation  
Junction temperature  
12  
3.0  
V
100  
mA  
mW  
Ptot  
200  
Tj  
150  
Storage temperature range  
Tstg  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
ICBO  
Testconditons  
Min  
50  
Typ  
Max  
1.0  
Unit  
A
VCB = 10 V, IE = 0 mA  
VEB = 1.0 V, IC = 0 mA  
VCE = 10 V, IC = 20 mA  
IEBO  
1.0  
A
hFE  
120  
11.5  
1.1  
250  
2
Insertion power gain  
Noise figure  
VCE = 10 V, IC = 20 mA, f = 1 GHz  
VCE = 10 V, IC = 7 mA, f = 1 GHz  
VCB = 10 V, IE = 0 mA, f = 1 MHz  
VCE = 10 V, IC = 20 mA  
dB  
dB  
S21e  
NF  
Cre  
fT  
2.0  
1.0  
Reverse transfer capacitance  
Transition frequency  
0.55  
7
pF  
GHz  
*. Pulse measurement: PW  
350 s, Duty Cycle  
2%.  
hFE Classification  
Marking  
Rank  
hFE  
R23  
Q
R24  
R
R25  
S
50 100  
80 160  
125 250  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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