2SC3356

更新时间： 2024-09-25 06:20:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
5页	236K
描述
isc Silicon NPN RF Transistor

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2SC3356 数据手册

INCHANGE Semiconductor

iscRF Product Specification

isc Silicon NPN RF Transistor

2SC3356

DESCRIPTION

·Low Noise and High Gain

NF = 1.1 dB TYP., G_a= 11 dB TYP.

@V_CE= 10 V, I_C= 7 mA, f = 1.0 GHz

·High Power Gain

MAG = 13 dB TYP.

@V_CE= 10 V, I_C= 20 mA, f = 1.0 GHz

APPLICATIONS

·Designed for low noise amplifier at VHF, UHF and CATV

band.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

3.0

Collector Current-Continuous

0.1

Collector Power Dissipation

@T_C=25℃

P_C

0.2

℃

T_J

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

isc Website：www.iscsemi.cn

12 3 4 5

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与2SC3356相关器件

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2SC3356(NE85633)	ETC	获取价格	Discrete
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2SC3356_15	WINNERJOIN	获取价格	TRANSISTOR (NPN)
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