5秒后页面跳转
2SC3356 PDF预览

2SC3356

更新时间: 2024-11-14 14:54:07
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 1091K
描述
双极型晶体管

2SC3356 技术参数

极性:NPNCollector-emitter breakdown voltage:12
Collector Current - Continuous:0.1DC current gain - Min:50
DC current gain - Max:300Transition frequency:6000
Package:SOT-23Storage Temperature Range:-55-150
class:Transistors

2SC3356 数据手册

 浏览型号2SC3356的Datasheet PDF文件第2页 
2SC3356  
Silicon Epitaxial Planar Transistor  
A
SOT-23  
Min  
Dim  
A
Max  
3.10  
1.50  
FEATURES  
2.70  
E
z
Low noise and high gain.  
B
1.10  
K
B
NF=1.1dB TYP.,Ga=11dB TYP.  
@VCE=10V,IC=7mA, f=1.0GHz  
High power gain. MAG=13dB TYP.  
@VCE=10V,IC=20mA,f=1.0GHz.  
C
D
E
1.0 Typical  
0.4 Typical  
0.35  
0.48  
2.00  
0.1  
J
z
D
G
H
J
1.80  
0.02  
G
0.1 Typical  
H
K
2.20  
2.60  
APPLICATIONS  
C
All Dimensions in mm  
z
Designed for low noise amplifier at VHF,UHF and CATV band.  
SOT-23  
ORDERING INFORMATION  
Type No.  
2SC3356  
Marking  
Package Code  
SOT-23  
R23/R24/R25  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Units  
Collector-Base Voltage  
20  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
12  
V
3
V
Collector Current -Continuous  
Collector Dissipation  
100  
mA  
mW  
PC  
200  
Junction and Storage Temperature  
Tj,Tstg  
-65 to +150  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Parameter  
Symbol Test conditions  
V(BR)CBO IC=10μA,IE=0  
V(BR)CEO IC=1mA,IB=0  
V(BR)EBO IE=10μA,IC=0  
MIN  
20  
12  
3
TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
V
ICBO  
VCB=10V,IE=0  
VEB=1V,IC=0  
1
μA  
μA  
Emitter cut-off current  
IEBO  
hFE  
fT  
1
DC current gain  
VCE=10V,IC=20mA  
VCE=10V,IC= 20mA  
50  
120  
7
300  
Transition frequency  
GHz  
dB  
VCE=10V, IC= 20mA ,  
f=1GHz  
2
Insertion power gain  
Feed-back capacitance  
Noise Figure  
|S21e  
|
11.5  
VCB=10V, IE=0,f=1MHz  
Cre  
0.55 1.0  
pF  
V
CE=10V,IC=7mA,  
NF  
1.1  
2.0  
dB  
f=1GHz  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
Range  
Marking  
50-100  
R23  
80-160  
R24  
125-250  
R25  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

与2SC3356相关器件

型号 品牌 获取价格 描述 数据表
2SC3356(NE85633) ETC

获取价格

Discrete
2SC3356_09 UTC

获取价格

HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356_11 UTC

获取价格

HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356_15 WINNERJOIN

获取价格

TRANSISTOR (NPN)
2SC3356_15 UTC

获取价格

HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356-3 KEXIN

获取价格

NPN Transistors
2SC3356-3L BL Galaxy Electrical

获取价格

12V,0.1A,General Purpose NPN Bipolar Transistor
2SC3356-A RENESAS

获取价格

NPN Silicon RF Transistor
2SC3356-A-R RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-A-S RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR