Datasheet > 2SC3356

2SC3356

更新时间： 2024-11-14 14:54:07

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1091K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SC3356 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	12
Collector Current - Continuous：	0.1	DC current gain - Min：	50
DC current gain - Max：	300	Transition frequency：	6000
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

2SC3356 数据手册

2SC3356

Silicon Epitaxial Planar Transistor

SOT-23

Min

Dim

Max

3.10

1.50

FEATURES

2.70

Low noise and high gain.

1.10

NF=1.1dB TYP.,G_a=11dB TYP.

@V_CE=10V,I_C=7mA, f=1.0GHz

High power gain. MAG=13dB TYP.

@V_CE=10V,I_C=20mA,f=1.0GHz.

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

1.80

0.02

0.1 Typical

2.20

2.60

APPLICATIONS

All Dimensions in mm

Designed for low noise amplifier at VHF,UHF and CATV band.

SOT-23

ORDERING INFORMATION

Type No.

2SC3356

Marking

Package Code

SOT-23

R23/R24/R25

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

100

℃

P_C

200

Junction and Storage Temperature

T_j,T_stg

-65 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10μA,I_C=0

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

V_CB=10V,I_E=0

V_EB=1V,I_C=0

μA

Emitter cut-off current

I_EBO

h_FE

f_T

DC current gain

V_CE=10V,I_C=20mA

V_CE=10V,I_C= 20mA

120

300

Transition frequency

GHz

V_CE=10V, I_C= 20mA ,

f=1GHz

Insertion power gain

Feed-back capacitance

Noise Figure

|S_21e

11.5

V_CB=10V, I_E=0,f=1MHz

C_re

0.55 1.0

_CE=10V,I_C=7mA,

1.1

2.0

f=1GHz

CLASSIFICATION OF h_FE

Rank

Range

Marking

50-100

R23

80-160

R24

125-250

R25

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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