Datasheet > 2SC3356

2SC3356

更新时间： 2024-11-14 17:01:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	385K
描述
12V,0.1A,General Purpose NPN Bipolar Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3356 数据手册

NPN Silicon Epitaxial Planar Transistor

2SC3356

Features



Low noise and high gain

High power gain

Mechanic al Data



Case: SOT-23

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-23

Ordering Information

Part Number

Package

SOT-23

Shipping Quantity

Marking Code

2SC3356

3000 pcs / Tape & Reel

R23/R24/R25

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

100

Thermal Characteristics

Parameter

Collector Power Dissipation ^*1

Symbol

P_C

Value

200

Unit

°C/W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

375

294

226

-55 ~ +150

-65 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: The data tested by surface mounted on a 16mm * 18mm * 2mm FR4-epoxy P.C.B

STM0045A: July 2020

www.gmesemi.com

12 3 4

中文翻译

下载PDF

与2SC3356相关器件

型号	品牌	获取价格	描述	数据表
2SC3356(NE85633)	ETC	获取价格	Discrete
2SC3356_09	UTC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356_11	UTC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356_15	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SC3356_15	UTC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356-3	KEXIN	获取价格	NPN Transistors
2SC3356-3L	BL Galaxy Electrical	获取价格	12V,0.1A,General Purpose NPN Bipolar Transistor
2SC3356-A	RENESAS	获取价格	NPN Silicon RF Transistor
2SC3356-A-R	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-A-S	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR