Datasheet > 2SC3356

2SC3356

更新时间： 2024-09-26 02:59:11

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
1页	128K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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2SC3356 数据手册

RoHS

2SC3356

SOT-23-3L

2SC3356 TRANSISTOR (NPN)

FEATURES

1. BASE

2. EMITTER

3. COLLECTOR

Power dissipation

P_CM:

0.2

0.1

W (Tamb=25℃)

2. 80¡ À0. 05

1. 60¡ À0. 05

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO20

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=10µA, I_E=0

Ic= 1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

I_E= 10µA, I_C=0

V_CB= 10 V, I_E=0

µA

I_EBO

V_EB= 1V , I_C=0

h_FE

V_CE= 10V, I_C= 20mA

300

V_CE=10V, I_C= 20mA

GHz

Transition frequency

f_T

V_CE=10V, I_C= 7mA, f = 1GHz

Noise figure

CLASSIFICATION OF h^FE

Marking

R23

R24

R25

Rank

WEJ ELECTRONIC CO.,LTD

Range

50-100

80-160

125-250

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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