2SC3333
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3333
High Voltage Switching Applications
Unit: mm
Color TV Chroma Output Applications
·
·
·
High voltage: V
= 250 V
CEO
Low C : 1.8 pF (max)
re
Complementary to 2SA1320
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
V
CEO
V
EBO
250
250
5
V
V
V
DC
Collector current
Pulsed
I
50
C
mA
I
100
20
CP
Base current
I
mA
W
B
Collector power dissipation
Junction temperature
Storage temperature range
P
0.6
C
JEDEC
JEITA
TO-92
T
150
-55~150
°C
°C
j
SC-43
T
stg
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
= 200 V, I = 0
¾
¾
¾
¾
0.1
0.1
¾
mA
mA
V
CBO
CB
EB
E
I
= 5 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
DC current gain
V
I
= 1 mA, I = 0
250
50
¾
¾
C
B
h
V
= 20 V, I = 25 mA
¾
¾
FE
CE (sat)
CE
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= 10 mA, I = 1 mA
¾
1.5
¾
V
V
C
B
V
V
V
V
= 20 V, I = 25 mA
¾
0.75
100
¾
BE
CE
CE
CB
C
Transition frequency
f
= 10 V, I = 10 mA
60
¾
¾
MHz
pF
T
C
Reverse transfer capacitance
C
re
= 30 V, I = 0, f = 1 MHz
1.8
E
1
2003-03-25