Datasheet > 2SC3346O

2SC3346O

更新时间： 2024-09-26 03:13:47

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
4页	168K
描述
Transistor

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中文翻译

获取价格

数据手册

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2SC3346O 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3346

DESCRIPTION

·With TO-220C package

·Complement to type 2SA1329

·High speed switching time

: t_stg=1.0μs(Typ.)

·Low collector saturation voltage

: V_CE(sat)=0.4V(Max.)@I_C=6A

APPLICATIONS

·For high current switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_B

Base current

P_C

Collector dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3 4

中文翻译

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与2SC3346O相关器件

型号	品牌	获取价格	描述	数据表
2SC3346Y	ISC	获取价格	Transistor
2SC3352	ISC	获取价格	Silicon NPN Power Transistors
2SC3352	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC3352A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 1.5A I(C) \| SOT-186
2SC3353	ISC	获取价格	Silicon NPN Power Transistor
2SC3353A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 5A I(C) \| SOT-186
2SC3354	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
2SC3354S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 50MA I(C) \| SIP
2SC3354T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 50MA I(C) \| SIP
2SC3355	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR