Datasheet > 2SC3340-G

2SC3340-G

更新时间： 2024-11-27 01:14:15

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科信 - KEXIN		/
页数	文件大小	规格书
2页	952K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC3340-G 数据手册

SMD Type

Transistors

NPN Transistors

2SC3440

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Low collector to emitter saturation voltage.

● Excellent linearity nof DC forward current gain.

● Super mini package for easy mounting.

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

● High collector current.

● Complementary to 2SA1365

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

Collector Current - Continuous

Peak Collector Current

700

Collector Power Dissipation

Junction Temperature

150

125

℃

Storage Temperature Range

Tstg

-55 to 125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 100 uA，RBE= ∞

= 100 u A， I = 0

CB= 25 V , I = 0

EB= 4V , I =0

E= 0

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=500 mA, I

=25mA

0.2

0.5

1.2

800

=500 mA, I

CE= 4V, I

CE= 6V, I

= 100mA

= 10mA

150

Transition frequency

180

MHz

■ Classification of hfe

Type

Range

Marking

2SC3340-E

150-300

2SC3340-F

250-500

2SC3340-G

400-800

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