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2SC3336 PDF预览

2SC3336

更新时间: 2024-02-07 16:15:52
品牌 Logo 应用领域
SAVANTIC 晶体晶体管开关局域网
页数 文件大小 规格书
4页 167K
描述
Silicon NPN Power Transistors

2SC3336 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.77
外壳连接:COLLECTOR最大集电极电流 (IC):15 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SC3336 数据手册

 浏览型号2SC3336的Datasheet PDF文件第2页浏览型号2SC3336的Datasheet PDF文件第3页浏览型号2SC3336的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3336  
DESCRIPTION  
·With TO-3P(I) package  
·High voltage,high speed  
APPLICATIONS  
·For high voltage ; high speed and  
high power switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3P(I)) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
500  
UNIT  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Open base  
400  
V
Open collector  
10  
V
15  
A
ICM  
Collector current-peak  
Base current  
25  
A
IB  
7.5  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
100  
W
Tj  
150  
Tstg  
-55~150  

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