Datasheet > 2SC3352

2SC3352

更新时间： 2024-11-23 05:56:35

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	107K
描述
Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3352 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3352

DESCRIPTION

·With TO-220Fa package

·High voltage

·High speed switching

APPLICATIONS

·For high speed switching applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220Fa) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

800

500

UNIT

Open emitter

Open base

Open collector

1.5

I_CM

Collector current-Peak

Base current

3.0

I_B

0.5

T_C=25ꢀ

T_a=25ꢀ

P_C

Collector power dissipation

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_j

T_stg

12 3

中文翻译

下载PDF

与2SC3352相关器件

型号	品牌	获取价格	描述	数据表
2SC3352A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 1.5A I(C) \| SOT-186
2SC3353	ISC	获取价格	Silicon NPN Power Transistor
2SC3353A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 5A I(C) \| SOT-186
2SC3354	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
2SC3354S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 50MA I(C) \| SIP
2SC3354T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 50MA I(C) \| SIP
2SC3355	NEC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
2SC3355	RENESAS	获取价格	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355	UTC	获取价格	HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3355	ISC	获取价格	isc Silicon NPN RF Transistor