2SC3322

更新时间： 2024-11-28 21:55:35

品牌	Logo	应用领域
日立 - HITACHI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
7页	49K
描述
Silicon NPN Triple Diffused

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中文翻译

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数据手册

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2SC3322 数据手册

2SC3322

Silicon NPN Tirple Diffused

Application

High voltage, high speed and high power switching

Outline

TO-3P

1. Base

2. Collector

(Flange)

3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

900

800

Collector peak current

Base current

I_C(peak)

I_B

2.5

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at T_C= 25°C.

P_C*¹

°C

150

Tstg

–55 to +150

12 3 4 5 6 7

中文翻译

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