Datasheet > 2SC3143-4-TB-E

2SC3143-4-TB-E

更新时间： 2024-01-11 19:22:18

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	40K
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2SC3143-4-TB-E

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2SC3143-4-TB-E 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.57
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

2SC3143-4-TB-E 数据手册

Ordering number:ENN1057C

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1257/2SC3143

High-Voltage Switching, AF Power Amp,

100W Output Predriver Applications

Features

Package Dimensions

unit:mm

· Very small-sized package permitting the 2SA1257/

2SC3143-applied sets to be made small and slim.

2018B

· High breakdown voltage (V

· Small output capacitance.

≥160V).

CEO

[2SA1257/2SC3143]

0.4

0.16

0 to 0.1

0.95

1.9

2.9

1 : Base

2 : Emitter

( ) : 2SA1257

3 : Collector

SANYO : CP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

(–)180

(–)160

(–)5

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)80

˚C

Collector Current Pulse

Collector Dissipation

Junction Temperature

Storage Temperature

(–)150

200

125

Tstg

–55 to +125

˚C

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)120V, I =0

=(–)4V, I =0

=(–)5V, I =(–)10mA

(–)0.1

270*

µA

CBO

Emitter Cutoff Current

DC Current Gain

EBO

60*

* : The 2SA1257/2SC3143 are classified by 10mA h as follows :

Continued on next page.

Rank

Marking 2SA1257 : G, 2SC3143 : K, h rank : 3, 4, 5

2SA1257

2SC3143

60 to 120

90 to 180

135 to 270

Rank

60 to 120

90 to 180

135 to 270

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

73102TN (KT)/71598HA (KT)/7148MO/3187AT/D103KI, MT No.1057-1/4

12 3 4

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与2SC3143-4-TB-E相关器件

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2SC3143-HF-3_15	KEXIN	获取价格	NPN Transistors
2SC3143K3	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 150MA I(C) \| SOT-23
2SC3143-K3	KEXIN	获取价格	NPN Transistors
2SC3143K4	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 150MA I(C) \| SOT-23
2SC3143-K4	KEXIN	获取价格	NPN Transistors
2SC3143K5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 150MA I(C) \| SOT-23
2SC3143-K5	KEXIN	获取价格	NPN Transistors
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