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2SC3149_15 PDF预览

2SC3149_15

更新时间: 2024-02-17 01:29:26
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锦美电子 - JMNIC /
页数 文件大小 规格书
4页 342K
描述
Silicon NPN Power Transistors

2SC3149_15 数据手册

 浏览型号2SC3149_15的Datasheet PDF文件第2页浏览型号2SC3149_15的Datasheet PDF文件第3页浏览型号2SC3149_15的Datasheet PDF文件第4页 
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2SC3149  
DESCRIPTION  
·
·With TO-220C package  
·High breakdown voltage:  
VCBO=900V(Min)  
·Fast switching speed.  
·Wide ASO (Safe Operating Area)  
APPLICATIONS  
·800V/1.5A switching regulator applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
900  
800  
7
UNIT  
V
Open base  
V
Open collector  
V
1.5  
A
ICM  
Collector current-peak  
Base current  
5
A
IB  
0.8  
A
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
TC=25  
40  
W
Tj  
150  
-55~150  
Tstg  

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