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2SC3149K

更新时间： 2024-11-29 20:28:07
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
4页 104K
描述
TRANSISTOR,BJT,NPN,800V V(BR)CEO,1.5A I(C),TO-220AB

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2SC3149K 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.61Is Samacsys：N
最大集电极电流 (IC)：1.5 A配置：Single
最小直流电流增益 (hFE)：10最高工作温度：150 °C
极性/信道类型：NPN最大功率耗散 (Abs)：40 W
子类别：Other Transistors表面贴装：NO
标称过渡频率 (fT)：15 MHzBase Number Matches：1

2SC3149K 数据手册

 浏览型号2SC3149K的Datasheet PDF文件第2页浏览型号2SC3149K的Datasheet PDF文件第3页浏览型号2SC3149K的Datasheet PDF文件第4页 
Ordering number:EN1068C  
NPN Triple Diffused Planar Silicon Transistor  
2SC3149  
800V/1.5A Switching Regulator Applications  
Features  
Package Dimensions  
unit:mm  
· High breakdown voltage (V  
· Fast switching speed.  
· Wide ASO.  
≥900V).  
CBO  
2010C  
[2SC3149]  
1 : Base  
JEDEC : TO-220AB  
EIAJ : SC-46  
2 : Collector  
3 : Emitter  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
900  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
800  
V
CEO  
V
7
V
EBO  
I
1.5  
A
C
Collector Current (Pulse)  
Base Current  
I
PW≤300µs, Duty Cycle≤10%  
5
A
CP  
I
0.8  
40  
A
B
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
W
˚C  
˚C  
Tc=25˚C  
C
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
10  
Collector Cutoff Current  
I
V
V
V
V
V
V
=800V, I =0  
E
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
Emitter Cutoff Current  
DC Current Gain  
I
=5V, I =0  
10  
EBO  
C
h
h
1
=5V, I =0.1A  
C
=5V, I =0.5A  
C
=10V, I =0.1A  
C
=10V, f=1MHz  
10*  
40*  
FE  
FE  
2
8
Gain-Bandwidth Product  
Output Capacitance  
f
15  
30  
MHz  
pF  
T
C
ob  
* : The h 1 of the 2SC3149 is classified as follows. When specifying the h 1 rank, specify two ranks or more in principle.  
FE  
FE  
10  
K
20  
15  
L
30  
20  
M
40  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N1098HA (KT)/5137KI/2125MW, TS No.1068–1/4  
1234

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与2SC3149K相关器件

型号 品牌 获取价格 描述 数据表
2SC3149-K-T60-K UTC

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 		Transistor
2SC3149L ETC

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 		TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 1.5A I(C) | TO-220AB
2SC3149-L ONSEMI

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 		1.5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
2SC3149L-K-T60-K UTC

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 		Transistor
2SC3149L-L-T60-K UTC

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 		Transistor
2SC3149L-T60-K UTC

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 		NPN TRANSISTOR
2SC3149L-T60-K-K UTC

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 		Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SC3149L-T60-K-L UTC

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 		Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2SC3149L-T60-T UTC

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 		Power Bipolar Transistor,
2SC3149M ONSEMI

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 		1.5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

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