是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SIP | 包装说明: | LEAD FREE PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.6 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 800 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 15 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3149L-T60-T | UTC |
获取价格 |
Power Bipolar Transistor, | |
2SC3149M | ONSEMI |
获取价格 |
1.5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN | |
2SC3149-M | ONSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
2SC3149M88 | CJ |
获取价格 |
Transistor | |
2SC3149-M-T60-K | UTC |
获取价格 |
Transistor | |
2SC3149-T60-K | UTC |
获取价格 |
NPN TEANSISTOR | |
2SC3149-T60-K-K | UTC |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC3149-T60-K-M | UTC |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
2SC3150 | MOSPEC |
获取价格 |
POWER TRANSISTORS(3A,800V,50W) | |
2SC3150 | SANYO |
获取价格 |
For Switching Regulator |