Datasheet > 2SC3149M88

2SC3149M88

更新时间： 2024-11-27 14:46:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	107K
描述
Transistor

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技术参数
数据手册

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2SC3149M88 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC3149M88 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

2SC3149M TRANSISTOR (NPN)

TO – 126

FEATURES

1. BASE

High Breakdown Voltage:

Fast Switching Speed.

Wide ASO (Safe Operating Area)

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

1290

1200

800

Unit

2SC3149M

V_CBO

Collector-Base Voltage

2SC3149M 88-C

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.6

P_C

Collector Power Dissipation

1.25

100

R_θJA

T_j

Thermal Resistance From Junction To Ambient

Junction Temperature

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

2SC3149M 88

Min

Typ

Max

Unit

I_C=0.1mA,

1290

Collector-base breakdown voltag

V_(BR)CBO

I_E=0

2SC3149M 88-C 1200

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

I_C=1mA,I_B=0

I_E=1m A,I_C=0

V_CB=1000V,I_E=0

V_EB=5V,I_C=0

V_CE=5V, I_C=0.1A

V_CE=5V, I_C=0.2A

800

V_(BR)EBO

I_CBO

μA

Emitter cut-off current

I_EBO

h_FE(1)

DC current gain

h_FE(2)

h_FE(3)

V_CE=5V, I_C=0.5mA

I_C=200mA,I_B=40mA

V_CB=10V,I_E=0, f=1MHz

V_CE=10V,I_C=0.1A,

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

V_BE(sat)

1.5

C_ob

f_T

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

A,Dec,2010

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