Datasheet > 2SC3146

2SC3146

更新时间： 2024-02-08 02:38:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	57K
描述
Silicon NPN Darlington Power Transistors

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中文翻译

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数据手册

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2SC3146 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Darlington Power Transistors

2SC3146

DESCRIPTION

·With TO-220C package

·High switching speed

·High DC current gain

·Wide area of safe operation

·Complement to type 2SA1260

APPLICATIONS

·60V/7A for High-Speed Drivers Applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Open base

Open collector

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

1.75

125

-55~125

Junction temperature

Storage temperature

℃

T_j

T_stg

12 3

中文翻译

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