SMD Type
Transistors
NPN Transistors
2SC3143
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High breakdown voltage
● Small output capacitance.
● Complementary to 2SA1257
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
180
160
5
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
80
mA
mW
℃
I
cp
150
200
125
P
C
T
J
Storage Temperature Range
Tstg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA, I = 0
Ic= 1 mA, RBE= ∞
= 100μA, I = 0
CB= 120 V , I = 0
Min
180
160
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-Base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.7
1.2
1.5
270
uA
V
I
EB= 4V , I
C=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=30mA, IB
=3mA
V
C=30mA, I
B
= 3mA
= 10mA
= 10mA
V
BE)
FE
on
stg
V
V
CE= 5V, I
CE= 5V, I
C
C
h
60
Turn-ON Time
t
0.18
1
See specified Test Circuit
us
Storage Time
t
Fall Time
t
f
0.2
2
Collector output capacitance
Transition frequency
Cob
T
V
V
CB= 10V, f=10MHz
2.8
pF
f
CE= 10V, I
C= 10mA
150
MHz
■ Classification of hfe
Type
Range
Marking
2SC3143-K3
60-120
K3
2SC3143-K4
90-180
K4
2SC3143-K5
135-270
K5
1
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