2SC2983Y(SM)

更新时间： 2024-11-18 13:00:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器小信号双极晶体管驱动
页数	文件大小	规格书
4页	151K
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中文翻译

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数据手册

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2SC2983Y(SM) 数据手册

2SC2983

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2983

Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

•

High transition frequency: f = 100 MHz (typ.)

Complementary to 2SA1225

Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

160

Collector-emitter voltage

Emitter-base voltage

Collector current

1.5

Base current

0.3

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2005-02-01

12 3 4

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