Datasheet > 2SC2983Y(TO-251)

2SC2983Y(TO-251)

更新时间： 2024-11-18 14:49:59

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江苏长电/长晶 - CJ		/
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Transistor

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技术参数
数据手册

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2SC2983Y(TO-251) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC2983Y(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251 Plastic-Encapsulate Transistors

2SC2983 TRANSISTOR (NPN)

TO – 251

FEATURES

1. BASE

High Transition Frequency

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

160

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

160

Collector Current

1.5

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

T_j

125

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

160

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBO

I_C=1mA,I_E=0

V_(BR)CEO

I_C=10mA,I_B=0

V_(BR)EBO

I_CBO

I_EBO

I_E=1mA,I_C=0

V_CB=160V,I_E=0

μA

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=5V, I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V, I_C=500mA

V_CB=10V,I_E=0, f=1MHz

V_CE=10V,I_C=100mA,

240

1.5

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Collector output capacitance

Transition frequency

C_ob

100

MHz

f_T

*Pulse test

CLASSIFICATION OF h_FE

RANK

RANGE

70-140

120-240

A,Dec,2010

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