Datasheet > 2SC2983-Y(T6L1,NQ)

2SC2983-Y(T6L1,NQ)

更新时间： 2024-01-01 11:49:57

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器晶体管
页数	文件大小	规格书
4页	162K
描述
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon

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2SC2983-Y(T6L1,NQ) 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.66
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	1.5 A	集电极-发射极最大电压：	160 V
配置：	SINGLE	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

2SC2983-Y(T6L1,NQ) 数据手册

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2SC2983

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2983

Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

•

High transition frequency: f = 100 MHz (typ.)

Complementary to 2SA1225

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

160

Collector-emitter voltage

Emitter-base voltage

Collector current

1.5

Base current

0.3

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-7J1A

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-10

12 3 4

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