Datasheet > 2SC2883-Y(TE12RCF)

2SC2883-Y(TE12RCF)

更新时间： 2024-09-15 14:50:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	145K
描述
Small Signal Bipolar Transistor

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2SC2883-Y(TE12RCF) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

2SC2883-Y(TE12RCF) 数据手册

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2SC2883

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2883

Audio Frequency Amplifier Applications

Unit: mm

•

Suitable for output stage of 3 watts amplifier

Small flat package

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SA1203

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

1.5

0.3

500

Base current

PW-MINI

JEDEC

Collector power dissipation

1000

―

(Note 1)

JEITA

SC-62

2-5K1A

Junction temperature

150

°C

TOSHIBA

Storage temperature range

stg

−55 to 150

Weight: 0.05 g (typ.)

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 mm)

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-10

12 3 4

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