Datasheet > 2SC2884_15

2SC2884_15

更新时间： 2024-09-16 01:16:19

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC2884_15 数据手册

SMD Type

Transistors

NPN Transistors

2SC2884

■ Features

1.70 0.1

● Suitable for output stage of 1 watts amplifier

● Small flat package

● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

0.42 0.1

● Complementary to 2SA1204

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

BaseCurrent

Symbol

Rating

Unit

VCBO

VCEO

VEBO

800

℃

160

Collector Power Dissipation

(Note.1)

500

1000

150

Junction Temperature

Storage Temperature Range

Tstg

-55 to 150

Note.1:Mounted on a ceramic substrate (250 mm²× 0.8 t)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 1mA， I = 0

Ic= 10mA， I

= 1mA， I

CB= 35V , I

EB= 5V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

= 0

CBO

EBO

= 0

0.1

0.5

1.2

0.8

320

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=500mA, I

=20mA

C=500mA, I

CE= 1V, I

= 10mA

0.5

100

= 100mA

= 700mA

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= 10V, I

= 0,f=1MHz

CE= 5V, I = 10mA

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SC2884-O

100-200

PO*

2SC28844-Y

160-320

PY*

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