是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-62 | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.45 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.8 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 1 W | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2884-Y(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SOT-89 | |
2SC2884-Y-HF | KEXIN |
获取价格 |
NPN Transistors | |
2SC2884YTE12L | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
2SC2884YTE12R | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
2SC2885 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING | |
2SC2885-AZ | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon | |
2SC2885K | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA | |
2SC2885-K | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon | |
2SC2885-K-AZ | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon | |
2SC2885L | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA |