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2SC2884-Y PDF预览

2SC2884-Y

更新时间: 2024-11-06 12:54:27
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体音频放大器小信号双极晶体管
页数 文件大小 规格书
4页 133K
描述
Audio Frequency Amplifier Applications

2SC2884-Y 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SC-62包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.45Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:1 W最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2SC2884-Y 数据手册

 浏览型号2SC2884-Y的Datasheet PDF文件第2页浏览型号2SC2884-Y的Datasheet PDF文件第3页浏览型号2SC2884-Y的Datasheet PDF文件第4页 
2SC2884  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC2884  
Audio Frequency Amplifier Applications  
Unit: mm  
High DC current gain: h = 100 to 320  
FE  
Suitable for output stage of 1 watts amplifier  
Small flat package  
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)  
Complementary to 2SA1204  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
800  
160  
500  
mA  
mA  
C
Base current  
I
B
PW-MINI  
JEDEC  
P
C
Collector power dissipation  
mW  
P
C
1000  
JEITA  
SC-62  
2-5K1A  
(Note 1)  
Junction temperature  
T
j
150  
°C  
°C  
TOSHIBA  
Storage temperature range  
T
stg  
55 to 150  
Weight: 0.05 g (typ.)  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-12-21  

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