Datasheet > 2SC2885-M-AZ

2SC2885-M-AZ

更新时间： 2024-11-21 15:31:23

品牌	Logo	应用领域
瑞萨 - RENESAS		开关晶体管
页数	文件大小	规格书
6页	128K
描述
Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon

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2SC2885-M-AZ 技术参数

生命周期：	Obsolete	包装说明：	IN-LINE, R-PSIP-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.32
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.002 A
集电极-发射极最大电压：	200 V	配置：	SINGLE
最小直流电流增益 (hFE)：	30	JESD-30 代码：	R-PSIP-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大开启时间（吨）：	1000 ns	Base Number Matches：	1

2SC2885-M-AZ 数据手册

DATA SHEET

SILICON TRANSISTORS

2SC2885, 2946, 2946(1)

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small

package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC

converters and switching regulators.

There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for

industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in

a hybrid IC.

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Symbol

V^CBO

Ratings

330

Unit

V^CEO

200

V^EBO

7.0

I^C(DC)

2.0

I^C(pulse)*

I^B(DC)

4.0

1.0

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

600

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16135EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SC2885-M-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SC2885N	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 2A I(C) \| TO-251AA
2SC2885-N	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC288A(5.B)	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC288A(5.B)E	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC288A(5.B)F	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2893	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
2SC2898	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC2898	RENESAS	获取价格	Silicon NPN Triple Diffused
2SC2898	ISC	获取价格	Silicon NPN Power Transistors
2SC2898	HITACHI	获取价格	Silicon NPN Triple Diffused

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