Datasheet > 2SC2885M

2SC2885M

更新时间： 2024-11-24 23:20:11

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	129K
描述
TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 2A I(C) \| TO-251AA

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中文翻译

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2SC2885M 数据手册

DATA SHEET

SILICON TRANSISTORS

2SC2885, 2946, 2946(1)

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small

package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC

converters and switching regulators.

There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for

industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in

a hybrid IC.

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

Symbol

V^CBO

Ratings

330

Unit

V^CEO

200

V^EBO

7.0

I^C(DC)

2.0

I^C(pulse)*

I^B(DC)

4.0

1.0

P^T(Tc = 25°C)

P^T(Ta = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

600

150

−55 to +150

T^stg

* PW ≤ 300 µs, duty cycle ≤ 10%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16135EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

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与2SC2885M相关器件

型号	品牌	获取价格	描述	数据表
2SC2885-M	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC2885-M-AZ	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC2885N	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 2A I(C) \| TO-251AA
2SC2885-N	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC288A(5.B)	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC288A(5.B)E	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC288A(5.B)F	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC2893	ASI	获取价格	NPN SILICON RF POWER TRANSISTOR
2SC2898	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC2898	RENESAS	获取价格	Silicon NPN Triple Diffused