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2SC2885K PDF预览

2SC2885K

更新时间: 2024-11-20 23:20:11
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 129K
描述
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA

2SC2885K 数据手册

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DATA SHEET  
SILICON TRANSISTORS  
2SC2885, 2946, 2946(1)  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING  
The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small  
package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC  
converters and switching regulators.  
There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for  
industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in  
a hybrid IC.  
QUALITY GRADES  
• Standard  
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC  
Corporation to know the specification of quality grade on the devices and its recommended applications.  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
Symbol  
VCBO  
Ratings  
330  
Unit  
V
VCEO  
200  
V
VEBO  
7.0  
V
IC(DC)  
2.0  
A
IC(pulse)*  
IB(DC)  
4.0  
A
1.0  
A
PT (Tc = 25°C)  
PT (Ta = 25°C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
15  
W
mW  
°C  
°C  
600  
150  
55 to +150  
Tstg  
* PW 300 µs, duty cycle 10%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16135EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

与2SC2885K相关器件

型号 品牌 获取价格 描述 数据表
2SC2885-K RENESAS

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Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC2885-K-AZ RENESAS

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Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC2885L NEC

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TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA
2SC2885-L RENESAS

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2000mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN
2SC2885-L-AZ RENESAS

获取价格

2mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2885M NEC

获取价格

TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA
2SC2885-M RENESAS

获取价格

Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC2885-M-AZ RENESAS

获取价格

Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
2SC2885N NEC

获取价格

TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA
2SC2885-N RENESAS

获取价格

Small Signal Bipolar Transistor, 0.002A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon