Datasheet > 2SC1815

2SC1815

更新时间： 2024-01-25 10:42:19

品牌	Logo	应用领域
TGS		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	49K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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2SC1815 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.66
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2SC1815 数据手册

TIGER ELECTRONIC CO.,LTD

2SC1815

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The 2SC1815 is designed for use in driver stage of AF amplifier

general purpose amplification.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................... -55~+150°C

Junction Temperature ..................................................................................... +150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................ 400 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 50 V

VCEO Collector to Emitter Voltage ...................................................................................... 50 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current........................................................................................................ 150 mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=60V, IE=0

100

250

700

IEBO

VEB=5V, IC=0

VCE(sat)

VBE(sat)

hFE1

hFE2

IC=100mA, IB=10mA

VCE=6V, IC=2mA

VCE=6V, IC=150mA

VCE=10V, IC=1mA, f=100MHz

VCB=10V, f=1MHz, IE=0

120

MHz

Cob

3.5

Classification of hFE1

Rank

Range

200-400

350-700

120-240

TIGER ELECTRONIC CO.,LTD

12 3

中文翻译

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