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2SC1815-BL PDF预览

2SC1815-BL

更新时间: 2024-11-28 14:53:47
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 311K
描述
50V,150mA,400mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

2SC1815-BL 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.6
Is Samacsys:NBase Number Matches:1

2SC1815-BL 数据手册

 浏览型号2SC1815-BL的Datasheet PDF文件第2页浏览型号2SC1815-BL的Datasheet PDF文件第3页 
2SC1815  
2SC1815-O  
2SC1815-Y  
2SC1815-GR  
2SC1815-BL  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2SC1815 Series  
are silicon NPN transistors, manufactured by the  
epitaxial planar process, designed for general purpose  
amplifier applications.  
SILICON NPN TRANSISTORS  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
V
60  
50  
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
V
5.0  
Continuous Collector Current  
Power Dissipation  
I
150  
mA  
mW  
°C  
C
P
400  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-55 to +125  
250  
J
stg  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=60V  
=50V  
=5.0V  
100  
nA  
CBO  
CEO  
EBO  
CB  
CE  
EB  
100  
100  
nA  
nA  
V
BV  
BV  
BV  
I =100μA  
60  
50  
CBO  
CEO  
EBO  
CE(SAT)  
BE(SAT)  
BE  
C
I =100μA  
V
C
I =100μA  
5.0  
V
E
V
V
V
I =100mA, I =10mA  
0.25  
1.0  
V
C
B
I =100mA, I =10mA  
V
C
B
I =310mA  
1.45  
700  
140  
240  
400  
700  
V
E
h
h
h
h
h
V
V
V
V
V
V
=6.0V, I =2.0mA (2SC1815)  
70  
70  
FE  
CE  
CE  
CE  
CE  
CE  
CE  
C
=6.0V, I =2.0mA (2SC1815-O)  
FE  
C
=6.0V, I =2.0mA (2SC1815-Y)  
120  
200  
350  
80  
FE  
C
=6.0V, I =2.0mA (2SC1815-GR)  
FE  
C
=6.0V, I =2.0mA (2SC1815-BL)  
FE  
C
f
=10V, I =1.0mA, f=30MHz  
MHz  
T
C
R1 (10-May 2018)  

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