Datasheet > 2SC1815-BL-A

2SC1815-BL-A

更新时间： 2024-11-28 03:30:15

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	82K
描述
Transistor

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中文翻译

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数据手册

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2SC1815-BL-A 数据手册

2SC1815-O

2SC1815-Y

2SC1815-GR

2SC1815-BL

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

•

2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

NPN Silicon

Epitaxial Transistor

Amplifier and General Purpose Applications.

Capable of 0.4Watts of Power Dissipation.

Collector-current 0.15A

Collector-base Voltage 60V

Marking : C1815

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_BEF

Collector-Emitter Breakdown Voltage*

Vdc

(I =0.1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I =100uAdc, I_E=0)

Emitter-Base Voltage

1.45

Vdc

(I =310mAdc)

I_CBO

Collector Cutoff Current

0.1

uAdc

(V_CB=60Vdc, I =0Adc)

I_CEO

Collector Cutoff Current

(V_CB=50Vdc, I =0Adc)

I_EBO

Emitter Cutoff Current

(V_EB=5.0Vdc, I =0Adc)

ON CHARACTERISTICS

h_FE(1)

V_CE(sat)

V_BE(sat)

V_BE

DC Current Gain*

(I =2.0mAdc, V_CE=6.0Vdc)

700

Collector-Emitter Saturation Voltage

(I =100mAdc, I_B=10mAdc)

0.25

Vdc

Base-Emitter Saturation Voltage

(I =100mAdc, I_B=10mAdc)

1.0

1.45

Vdc

DIMENSIONS

Base-Emitter Voltage

(I =310mAdc)

---

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

(I =1.0mAdc, V_CE=10Vdc, f=30MHz)

MHz

CLASSIFICATION OF HFE (1)

Rank

Range

70-140

200-400

350-700

120-240

www.mccsemi.com

1 of 2

Revision: 5

2007/03/02

中文翻译

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