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2SC1815GR PDF预览

2SC1815GR

更新时间: 2024-11-20 20:15:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
1页 74K
描述
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

2SC1815GR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
风险等级:5.15最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SC1815GR 数据手册

  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
2SC1815  
Features  
·
2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF  
Amplifier and General Purpose Applications.  
Capable of 0.4Watts of Power Dissipation.  
Collector-current 0.15A  
Collector-base Voltage 60V  
Marking Code: C1815  
NPN Silicon  
Epitaxial Transistor  
·
·
·
·
TO-92  
Pin Configuration  
Bottom View  
A
E
E
C
B
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
VBEF  
Collector-Emitter Breakdown Voltage*  
50  
60  
Vdc  
Vdc  
(I =0.1mAdc, IB=0)  
Collector-Base Breakdown Voltage  
C
C
(I =100uAdc, IE=0)  
C
Emitter-Base Voltage  
1.45  
Vdc  
(I =310mAdc)  
E
ICBO  
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=60Vdc, I =0Adc)  
E
ICEO  
Collector Cutoff Current  
(VCB=50Vdc, I =0Adc)  
E
IEBO  
Emitter Cutoff Current  
D
(VEB=5.0Vdc, I =0Adc)  
C
ON CHARACTERISTICS  
hFE(1)  
VCE(sat)  
VBE(sat)  
VBE  
DC Current Gain*  
(I =2.0mAdc, VCE=6.0Vdc)  
70  
700  
C
Collector-Emitter Saturation Voltage  
(I =100mAdc, IB=10mAdc)  
0.25  
Vdc  
C
G
Base-Emitter Saturation Voltage  
(I =100mAdc, IB=10mAdc)  
1.0  
1.45  
Vdc  
Vdc  
C
DIMENSIONS  
Base-Emitter Voltage  
(I =310mAdc)  
E
---  
INCHES  
MM  
DIM  
A
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MAX  
MIN  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
MAX  
4.70  
4.70  
---  
NOTE  
SMALL-SIGNAL CHARACTERISTICS  
.185  
.185  
---  
fT  
Transistor Frequency  
B
C
(I =1.0mAdc, VCE=10Vdc, f=30MHz)  
C
80  
MHz  
D
.020  
.145  
.105  
0.63  
3.68  
2.67  
E
G
CLASSIFICATION OF HFE (1)  
Rank  
O
Y
GR  
200-400  
BL  
350-700  
Range  
70-140  
120-240  
www.mccsemi.com  
Revision: 2  
2003/06/30  

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