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2SC1815-H PDF预览

2SC1815-H

更新时间: 2024-11-21 01:14:15
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
2页 987K
描述
NPN Transistors

2SC1815-H 数据手册

 浏览型号2SC1815-H的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Transistors  
2SC1815  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Power dissipation  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
50  
V
5
V
Collector Current to Continuous  
Collector Power Dissipation  
Junction Temperature  
150  
mA  
mW  
PC  
200  
Tj  
125  
Storage Temperature  
Tstg  
-55 to 125  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditions  
Min  
60  
Typ  
Max  
Unit  
V
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Collector cut to off current  
Collector cut to off current  
Emitter cut to off current  
VCBO  
VCEO  
ICBO  
Ic= 100 A, IE=0  
Ic= 0.1mA, IB=0  
VCB=60V, IE=0  
VCE=40V, IB=0  
VEB= 5V, IC=0  
50  
V
0.1  
1
A
ICEO  
A
IEBO  
0.1  
400  
0.25  
1
A
DC current gain  
hFE  
VCE= 6V, IC= 2mA  
130  
80  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
IC=100 mA, IB= 10mA  
IC=100 mA, IB= 10mA  
VCE=10V, IC= 1mA,f=30MHz  
V
V
MHz  
hFE Classification  
Type  
Range  
Marking  
2SC1815-L  
130-200  
HFL  
2SC1815-H  
200-400  
HF  
1
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