Datasheet > 2SC1815K

2SC1815K

更新时间： 2024-11-24 06:19:23

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	162K
描述
NPN Type Plastic Encapsulate Transistors

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中文翻译

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数据手册

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2SC1815K 数据手册

2SC1815K

NPN Type

Elektronische Bauelemente

Plastic Encapsulate Transistors

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

Dim

Max

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

ƔFEATURES

Power Dissipation

P^CM: 0.2 W ( Ta = 25 к )

Collector Current

I^CM: 0.15 A

Collector-Base Voltage

V^(BR)CBO: 60 V

Top View

1.BASE

2.EMITTER

3.COLLECTOR

All Dimension in mm

ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к)

TYPE NUMBER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_CEO

I_EBO

h_FE

V_{CE (sat)}

V_BE(sat)

TEST CONDITIONS

I_C= 100 µA, I_E= 0 A

I_C= 0.1 mA, I_B= 0 A

I_E= 100 µA, I_C= 0 A

V_CB= 60 V, I_E= 0 A

V_CE= 50 V, I_B= 0 A

V_EB= 5 V, I_C= 0 A

V_CE= 6 V, I_C= 2 mA

I_C= 100 mA, I_B= 10 mA

V_CE= 10 V, I_C= 1 mA,

f = 30 MHz

Min.

130

Typ.

Max.

UNIT

0.1

400

0.25

µA

Transition Frequency

f_T

MHz

Operating and Storage Junction

Temperature Range

T_J, T_STG

- 55 ~ +150

Ɣh_FEVALUES ARE CLASSIFIED AS FOLLOWS:

Rank

h_FE

130 ~ 200

200 ~ 400

Marking: HF

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Page 1 of 3

01-Jun-2002 Rev. A

12 3

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