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2SC1815-GR-BP PDF预览

2SC1815-GR-BP

更新时间: 2024-11-24 20:55:39
品牌 Logo 应用领域
美微科 - MCC 放大器晶体管
页数 文件大小 规格书
3页 411K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SC1815-GR-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SC1815-GR-BP 数据手册

 浏览型号2SC1815-GR-BP的Datasheet PDF文件第2页浏览型号2SC1815-GR-BP的Datasheet PDF文件第3页 
2SC1815-O  
2SC1815-Y  
2SC1815-GR  
2SC1815-BL  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF  
Amplifier and General Purpose Applications.  
Capable of 0.4Watts of Power Dissipation.  
Collector-current 0.15A  
Collector-base Voltage 60V  
Marking : C1815  
NPN Silicon  
Epitaxial Transistor  
x
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
TO-92  
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS  
A
E
Compliant. See ordering information)  
Operating and storage junction temperature range:-55oC to +125oC  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
B
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
50  
60  
5
Vdc  
Vdc  
(I =0.1mAdc, IB=0)  
C
Collector-Base Breakdown Voltage  
(I =100uAdc, IE=0)  
C
Emitter-Base Breakdown Voltage  
(IE=100uAdc,IC=0)  
Collector Cutoff Current  
Vdc  
C
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=60Vdc, I =0Adc)  
E
ICEO  
Collector Cutoff Current  
(VCB=50Vdc, I =0Adc)  
E
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, I =0Adc)  
C
ON CHARACTERISTICS  
D
hFE(1)  
VCE(sat)  
VBE(sat)  
VBE  
DC Current Gain*  
(I =2.0mAdc, VCE=6.0Vdc)  
70  
---  
700  
C
Collector-Emitter Saturation Voltage  
(I =100mAdc, IB=10mAdc)  
0.25  
Vdc  
C
Base-Emitter Saturation Voltage  
E
E
C
(I =100mAdc, IB=10mAdc)  
1.0  
1.45  
Vdc  
Vdc  
C
C
B
B
Base-Emitter Voltage  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
(I =310mAdc)  
E
G
SMALL-SIGNAL CHARACTERISTICS  
DIMENSIONS  
fT  
Transistor Frequency  
(I =1.0mAdc, VCE=10Vdc, f=30MHz)  
C
80  
MHz  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
COB  
NF  
Collector Output Capacitance  
(VCB=10Vdc, IE=0,f=1MHz)  
Noise Figure  
(VCE=6Vdc, IC=0.1mAdc,f=1KHz,Rg=10K)  
---  
3.5  
10  
pF  
---  
dB  
E
CLASSIFICATION OF HFE (1)  
Rank  
Range  
Straight Lead  
Bent Lead  
G
O
Y
GR  
200-400  
BL  
350-700  
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
70-140  
120-240  
www.mccsemi.com  
1 of 3  
Revision: G  
2013/01/01  

2SC1815-GR-BP 替代型号

型号 品牌 替代类型 描述 数据表
2SC1815-Y(TPE2,F) TOSHIBA

类似代替

150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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