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2SC1815BLTPE1

更新时间： 2024-11-20 14:26:51
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 267K
描述
TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

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2SC1815BLTPE1 技术参数

生命周期：Obsolete包装说明：CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.6
最大集电极电流 (IC)：0.15 A基于收集器的最大容量：3.5 pF
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：25JEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3元件数量：1
端子数量：3最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：80 MHzVCEsat-Max：0.25 V
Base Number Matches：1

2SC1815BLTPE1 数据手册

 浏览型号2SC1815BLTPE1的Datasheet PDF文件第2页浏览型号2SC1815BLTPE1的Datasheet PDF文件第3页浏览型号2SC1815BLTPE1的Datasheet PDF文件第4页 
2SC1815  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC1815  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
High voltage and high current:  
V
CEO  
= 50 V (min),  
I
C
= 150 mA (max)  
•
Excellent h  
linearity: h  
: h  
= 100 (typ.)  
FE (2)  
FE  
at V  
= 6 V, I = 150 mA  
C
CE  
(I = 0.1 mA)/h  
C
(I = 2 mA)  
C
FE  
FE  
= 0.95 (typ.)  
•
•
Low noise: NF = 1dB (typ.) at f = 1 kHz  
Complementary to 2SA1015 (O, Y, GR class)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
150  
50  
mA  
mA  
mW  
°C  
°C  
C
JEDEC  
JEITA  
TO-92  
Base current  
I
B
SC-43  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
400  
125  
−55~125  
C
T
j
TOSHIBA  
2-5F1B  
T
stg  
Weight: 0.21 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 60 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
0.1  
0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= 5 V, I = 0  
C
EBO  
h
FE (1)  
(Note)  
FE (2)  
V
V
= 6 V, I = 2 mA  
70  
⎯
700  
CE  
C
DC current gain  
h
= 6 V, I = 150 mA  
25  
⎯
⎯
80  
⎯
100  
0.1  
⎯
⎯
0.25  
1.0  
⎯
CE  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
V
I
I
= 100 mA, I = 10 mA  
V
V
CE (sat)  
BE (sat)  
C
C
B
= 100 mA, I = 10 mA  
B
f
V
V
V
= 10 V, I = 1 mA  
⎯
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
2.0  
3.5  
ob  
E
= 10 V, I = −1 mA  
E
Base intrinsic resistance  
Noise figure  
r
⎯
⎯
50  
⎯
Ω
bb’  
f = 30 MHz  
= 6 V, I = 0.1 mA  
V
CE  
C
NF  
1.0  
10  
dB  
f = 1 kHz, R = 10 kΩ  
G
Note: h classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700  
FE  
1
2007-11-01  
1234

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