Datasheet > 2SC1815BL

2SC1815BL

更新时间： 2024-02-12 05:26:44

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
1页	74K
描述
150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

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数据手册

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2SC1815BL 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.6	Is Samacsys：	N
最大集电极电流 (IC)：	0.15 A	配置：	Single
最小直流电流增益 (hFE)：	350	最高工作温度：	125 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.4 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	80 MHz	Base Number Matches：	1

2SC1815BL 数据手册

M C C

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20736 Marilla Street Chatsworth

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2SC1815

Features

2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

Amplifier and General Purpose Applications.

Capable of 0.4Watts of Power Dissipation.

Collector-current 0.15A

Collector-base Voltage 60V

Marking Code: C1815

NPN Silicon

Epitaxial Transistor

TO-92

Pin Configuration

Bottom View

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_BEF

Collector-Emitter Breakdown Voltage*

Vdc

(I =0.1mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I =100uAdc, I_E=0)

Emitter-Base Voltage

1.45

Vdc

(I =310mAdc)

I_CBO

Collector Cutoff Current

0.1

uAdc

(V_CB=60Vdc, I =0Adc)

I_CEO

Collector Cutoff Current

(V_CB=50Vdc, I =0Adc)

I_EBO

Emitter Cutoff Current

(V_EB=5.0Vdc, I =0Adc)

ON CHARACTERISTICS

h_FE(1)

V_CE(sat)

V_BE(sat)

V_BE

DC Current Gain*

(I =2.0mAdc, V_CE=6.0Vdc)

700

Collector-Emitter Saturation Voltage

(I =100mAdc, I_B=10mAdc)

0.25

Vdc

Base-Emitter Saturation Voltage

(I =100mAdc, I_B=10mAdc)

1.0

1.45

Vdc

DIMENSIONS

Base-Emitter Voltage

(I =310mAdc)

---

INCHES

DIM

MIN

.175

.500

.016

.135

.095

MAX

MIN

4.45

4.46

12.7

0.41

3.43

2.42

MAX

4.70

---

NOTE

SMALL-SIGNAL CHARACTERISTICS

.185

---

f_T

Transistor Frequency

(I =1.0mAdc, V_CE=10Vdc, f=30MHz)

MHz

.020

.145

.105

0.63

3.68

2.67

CLASSIFICATION OF HFE (1)

Rank

200-400

350-700

Range

70-140

120-240

www.mccsemi.com

Revision: 2

2003/06/30

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