2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
Features
•
2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
NPN Silicon
Epitaxial Transistor
Amplifier and General Purpose Applications.
Capable of 0.4Watts of Power Dissipation.
Collector-current 0.15A
Collector-base Voltage 60V
Marking : C1815
•
•
•
•
x
·
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
TO-92
•
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
A
E
Compliant. See ordering information)
•
Operating and storage junction temperature range:-55oC to +125oC
B
C
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage*
50
60
5
Vdc
Vdc
(I =0.1mAdc, IB=0)
C
Collector-Base Breakdown Voltage
(I =100uAdc, IE=0)
C
Emitter-Base Breakdown Voltage
(IE=100uAdc,IC=0)
Collector Cutoff Current
Vdc
0.1
0.1
0.1
uAdc
uAdc
uAdc
(VCB=60Vdc, I =0Adc)
E
ICEO
Collector Cutoff Current
(VCB=50Vdc, I =0Adc)
E
IEBO
Emitter Cutoff Current
D
(VEB=5.0Vdc, I =0Adc)
C
ON CHARACTERISTICS
hFE(1)
VCE(sat)
VBE(sat)
VBE
DC Current Gain*
(I =2.0mAdc, VCE=6.0Vdc)
70
700
C
Collector-Emitter Saturation Voltage
E
(I =100mAdc, IB=10mAdc)
0.25
Vdc
C
C
B
G
Base-Emitter Saturation Voltage
(I =100mAdc, IB=10mAdc)
1.0
1.45
Vdc
Vdc
C
DIMENSIONS
Base-Emitter Voltage
(I =310mAdc)
E
---
80
INCHES
MM
DIM
A
B
C
D
MIN
.170
.170
.550
.010
.130
.010
MAX
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
.190
.190
.590
.020
.160
.104
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(I =1.0mAdc, VCE=10Vdc, f=30MHz)
C
MHz
E
G
CLASSIFICATION OF HFE (1)
Rank
Range
O
70-140
Y
GR
200-400
BL
350-700
120-240
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Revision: C
2011/08/22