Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
1.0±0.1
For low-voltage switching
Features
■
●
Low collector to emitter saturation voltage VCE(sat)
1.5max.
1.1max.
0.5max.
●
High-speed switching
●
N type package enabling direct soldering of the radiating fin to
0.8±0.1
the printed circuit board, etc. of small electronic equipment.
2.54±0.3
5.08±0.5
Absolute Maximum Ratings (T =25˚C)
■
C
1:Base
2:Collector
3:Emitter
1
2
3
Parameter
Symbol
Ratings
–40
Unit
N Type Package
Collector to
2SB935
2SB935A
2SB935
VCBO
V
Unit: mm
3.4±0.3
base voltage
Collector to
–50
8.5±0.2
6.0±0.3
1.0±0.1
–20
VCEO
V
emitter voltage 2SB935A
Emitter to base voltage
Peak collector current
Collector current
–40
VEBO
ICP
–5
V
A
A
–15
IC
–10
R0.5
R0.5
0.8±0.1
Collector power TC=25°C
35
0 to 0.4
2.54±0.3
PC
W
1.1 max.
dissipation
Ta=25°C
1.3
5.08±0.5
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICBO
Conditions
min
typ
max
–50
–50
–50
Unit
µA
µA
V
2SB935
VCB = –40V, IE = 0
current
2SB935A
VCB = –50V, IE = 0
VEB = –5V, IC = 0
Emitter cutoff current
IEBO
VCEO
hFE1
Collector to emitter 2SB935
voltage 2SB935A
–20
–40
45
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
Forward current transfer ratio
*
hFE2
VCE = –2V, IC = –2A
90
260
– 0.6
–1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –7A, IB = – 0.23A
V
V
IC = –7A, IB = – 0.23A
Transition frequency
Collector output capacitance
Turn-on time
fT
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
150
200
0.1
0.5
0.1
MHz
pF
µs
Cob
ton
tstg
tf
Storage time
IC = –2A, IB1 = –66mA, IB2 = 66mA
µs
Fall time
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
90 to 180
130 to 260
1