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2SB935AH PDF预览

2SB935AH

更新时间: 2024-11-18 13:01:27
品牌 Logo 应用领域
松下 - PANASONIC 开关
页数 文件大小 规格书
3页 60K
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2SB935AH 数据手册

 浏览型号2SB935AH的Datasheet PDF文件第2页浏览型号2SB935AH的Datasheet PDF文件第3页 
Power Transistors  
2SB935, 2SB935A  
Silicon PNP epitaxial planar type  
Unit: mm  
3.4±0.3  
8.5±0.2  
6.0±0.5  
1.0±0.1  
For low-voltage switching  
Features  
Low collector to emitter saturation voltage VCE(sat)  
1.5max.  
1.1max.  
0.5max.  
High-speed switching  
N type package enabling direct soldering of the radiating fin to  
0.8±0.1  
the printed circuit board, etc. of small electronic equipment.  
2.54±0.3  
5.08±0.5  
Absolute Maximum Ratings (T =25˚C)  
C
1:Base  
2:Collector  
3:Emitter  
1
2
3
Parameter  
Symbol  
Ratings  
–40  
Unit  
N Type Package  
Collector to  
2SB935  
2SB935A  
2SB935  
VCBO  
V
Unit: mm  
3.4±0.3  
base voltage  
Collector to  
–50  
8.5±0.2  
6.0±0.3  
1.0±0.1  
–20  
VCEO  
V
emitter voltage 2SB935A  
Emitter to base voltage  
Peak collector current  
Collector current  
–40  
VEBO  
ICP  
–5  
V
A
A
–15  
IC  
–10  
R0.5  
R0.5  
0.8±0.1  
Collector power TC=25°C  
35  
0 to 0.4  
2.54±0.3  
PC  
W
1.1 max.  
dissipation  
Ta=25°C  
1.3  
5.08±0.5  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
1:Base  
2:Collector  
3:Emitter  
1
2
3
Tstg  
–55 to +150  
N Type Package (DS)  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Collector cutoff  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–50  
–50  
–50  
Unit  
µA  
µA  
V
2SB935  
VCB = –40V, IE = 0  
current  
2SB935A  
VCB = –50V, IE = 0  
VEB = –5V, IC = 0  
Emitter cutoff current  
IEBO  
VCEO  
hFE1  
Collector to emitter 2SB935  
voltage 2SB935A  
–20  
–40  
45  
IC = –10mA, IB = 0  
VCE = –2V, IC = – 0.1A  
Forward current transfer ratio  
*
hFE2  
VCE = –2V, IC = –2A  
90  
260  
– 0.6  
–1.5  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –7A, IB = – 0.23A  
V
V
IC = –7A, IB = – 0.23A  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCE = –10V, IC = – 0.5A, f = 10MHz  
VCB = –10V, IE = 0, f = 1MHz  
150  
200  
0.1  
0.5  
0.1  
MHz  
pF  
µs  
Cob  
ton  
tstg  
tf  
Storage time  
IC = –2A, IB1 = –66mA, IB2 = 66mA  
µs  
Fall time  
µs  
*hFE2 Rank classification  
Rank  
hFE2  
Q
P
90 to 180  
130 to 260  
1

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