Datasheet > 2SB936

2SB936

更新时间： 2024-09-29 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体开关晶体管
页数	文件大小	规格书
1页	62K
描述
Low collector-emitter saturation voltage VCE(sat). High-speed switching.

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2SB936 数据手册

Product specification

2SB936

TO-252

Unit: mm

2.30^+0.1

Features

6.50^+0.15

-0.15

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Low collector-emitter saturation voltage V^CE(sat).

High-speed switching.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

-20

-5

Collector current

-10

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-20

P^C

1.3

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-20

Typ

Max

Unit

Collector-emitter voltage

Collector-base cutoff curent

Emitter-base cutoff current

V^CEO

I^CBO

I^EBO

I^C= -10mA, I^B= 0

V^CB= -40 V,I^E= 0

V^EB= -5 V, I^C= 0

-50

260

ìA

V^CE= -2 V, I^C= -3 A

V^CE= -2 V, I^C= -0.1 A

Forward current transfer ratio

h^FE

Base-emitter saturation voltage

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

V^BE(sat)I^C= -10 A, I^B= -0.33 A

V^CE(sat)I^C= -10 A, I^B= -0.33 A

-1.5

-0.6

f^T

C^ob

t^on

t^stg

t^f

V^CE= -10 V, I^C= -0.5 A , f = 10 MHz

100

400

0.1

0.5

0.1

MHz

ìs

V^CB= -10V , I^E= 0 , f = 1.0MHz

I^C= -3 A,I^B1= -0.1 A,I^B2= 0.1 A,

V^CC= -20 V

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

h^FE

90 180

130 260

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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