Datasheet > 2SB936A-Q

2SB936A-Q

更新时间： 2024-11-22 01:12:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1264K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB936A-Q 数据手册

SMD Type

Transistors

PNP Transistors

2SB936A

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

■ Features

● Low collector to emitter saturation voltage VCE(sat)

● High-speed switching

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-50

-40

-5

Collector Current - Continuous

Collector current - Pulse

-10

-20

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.3

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -10 mA， I =0

= -100μA， I =0

CB= -50V , I =0

EB= -5V , I =0

Min

-50

-40

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-50

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-10 A, I

=-330mA

-0.6

-1.5

C=-10 A, I

FE(1)

FE(2)

CE= -2V, I

= -100mA

DC current gain

C= -3 A

260

Turn-on time

0.1

0.5

0.1

400

100

= – 3A, IB1 = –100mA, IB2 = 100mA

Storage time

stg

Fall time

Collector output capacitance

Transition frequency

■ Classification of hfe(2)

^CB= –10V, I

^CE= -10V, I

= 0, f = 1MHz

C= -500mA,f=10MHz

MHz

Type

2SB936A-Q

90-180

2SB936A-P

130-260

Range

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中文翻译

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