Datasheet > 2SB936AP

2SB936AP

更新时间： 2024-09-28 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	61K
描述
TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 10A I(C) \| TO-262VAR

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中文翻译

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数据手册

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2SB936AP 数据手册

Power Transistors

2SB0936, 2SB0936A (2SB936, 2SB936A)

Silicon PNP epitaxial planar type

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

1.0±0.1

For low-voltage switching

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

1.5max.

1.1max.

0.5max.

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to

0.8±0.1

the printed circuit board, etc. of small electronic equipment.

2.54±0.3

5.08±0.5

Absolute Maximum Ratings (T =25˚C)

■

1:Base

2:Collector

3:Emitter

Parameter

Symbol

Ratings

–40

Unit

N Type Package

Collector to

2SB0936

2SB0936A

2SB0936

V_CBO

Unit: mm

3.4±0.3

base voltage

Collector to

–50

8.5±0.2

6.0±0.3

1.0±0.1

–20

V_CEO

emitter voltage 2SB0936A

Emitter to base voltage

Peak collector current

Collector current

–40

V_EBO

I_CP

–5

–20

I_C

–10

R0.5

0.8±0.1

Collector power T_C=25°C

0 to 0.4

2.54±0.3

P_C

1.1 max.

dissipation

Ta=25°C

1.3

5.08±0.5

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CBO

Conditions

min

typ

max

–50

Unit

µA

2SB0936

V_CB= –40V, I_E= 0

current

2SB0936A

V_CB= –50V, I_E= 0

V_EB= –5V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

Collector to emitter 2SB0936

voltage 2SB0936A

–20

–40

I_C= –10mA, I_B= 0

V_CE= –2V, I_C= – 0.1A

Forward current transfer ratio

h_FE2

V_CE= –2V, I_C= –3A

260

– 0.6

–1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –10A, I_B= – 0.33A

Transition frequency

Collector output capacitance

Turn-on time

f_T

V_CE= –10V, I_C= – 0.5A, f = 10MHz

V_CB= –10V, I_E= 0, f = 1MHz

100

400

0.1

0.5

0.1

MHz

µs

C_ob

t_on

t_stg

t_f

Storage time

I_C= –3A, I_B1= – 0.1A, I_B2= 0.1A

µs

Fall time

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

Note) The part numbers in the parenthesis show conventional part number.

12 3 4

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