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2SB935

更新时间: 2024-11-21 06:22:47
品牌 Logo 应用领域
科信 - KEXIN /
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描述
Silicon PNP Epitaxial Planar Type

2SB935 数据手册

  
SMD Type  
Transistors  
Silicon PNP Epitaxial Planar Type  
2SB935  
TO-252  
Unit: mm  
6.50+0.15  
2.30+0.1  
Features  
-0.15  
-0.1  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
Low collector-emitter saturation voltage VCE(sat).  
High-speed switching.  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-40  
Unit  
V
-20  
V
-5  
V
Collector current  
-10  
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
-15  
A
PC  
1.3  
W
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-50  
Unit  
ìA  
ìA  
V
Collector-base cutoff curent  
Emitter-base cutoff current  
Collector-emitter voltage  
VCB = -40 V,IE = 0  
VEB = -5 V, IC = 0  
IEBO  
-50  
VCEO  
IC = -10mA, IB = 0  
VCE = -2 V, IC = -2 A  
VCE = -2 V, IC = -0.1 A  
-20  
90  
45  
260  
Forward current transfer ratio  
hFE  
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Collector output capacitance  
Turn-on time  
VCE(sat) IC = -7 A, IB = -0.23 A  
VBE(sat) IC = -7 A, IB = -0.23 A  
-1.5  
-0.6  
V
V
fT  
Cob  
ton  
tstg  
tf  
VCE = -10 V, IE = -0.5 A , f = 10 MHz  
VCB = -10V , IE = 0 , f = 1.0MHz  
150  
200  
0.1  
0.5  
0.1  
MHz  
pF  
ìs  
IC = -2 A,IB1 = -66 mA,IB2 = 66 mA  
Storage time  
ìs  
Fall time  
ìs  
hFE Classification  
Rank  
hFE  
Q
P
90 180  
130 260  
1
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