Datasheet > 2SB935A

2SB935A

更新时间： 2024-11-18 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体开关晶体管
页数	文件大小	规格书
1页	62K
描述
Low collector-emitter saturation voltage VCE(sat). High-speed switching.

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2SB935A 数据手册

Product specification

2SB935A

TO-252

Features

Unit: mm

6.50^+0.15

2.30^+0.1

Low collector-emitter saturation voltage V^CE(sat).

High-speed switching.

-0.15

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-50

Unit

-40

-5

Collector current

-10

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-15

P^C

1.3

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

V^CB= -50 V,I^E= 0

Min

Typ

Max

Unit

ìA

Collector-base cutoff curent

Emitter-base cutoff current

Collector-emitter voltage

-50

V^EB= -5 V, I^C= 0

V^CEO

I^C= -10mA, I^B= 0

V^CE= -2 V, I^C= -2 A

V^CE= -2 V, I^C= -0.1 A

-40

260

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

V^CE(sat)I^C= -7 A, I^B= -0.23 A

V^BE(sat)I^C= -7 A, I^B= -0.23 A

-1.5

-0.6

f^T

C^ob

t^on

tstg

t^f

V^CE= -10 V, I^C= -0.5 A , f = 10 MHz

V^CB= -10V , I^E= 0 , f = 1.0MHz

150

200

0.1

0.5

0.1

MHz

ìs

I^C= -2 A,I^B1= -66 mA,I^B2= 66 mA

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

h^FE

90 180

130 260

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