Datasheet > 2SB906-Y(TE16L1,NQ)

2SB906-Y(TE16L1,NQ)

更新时间： 2024-11-23 07:44:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	159K
描述
Small Signal Bipolar Transistor

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2SB906-Y(TE16L1,NQ) 数据手册

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2SB906

TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)

2SB906

Audio Frequency Power Amplifier Application

Unit: mm

•

Low collector saturation voltage

: V = −1.0 V (typ.) (I = −3 A, I = −0.3 A)

CE (sat)

•

High power dissipation: P = 20 W (Tc = 25°C)

Complementary to 2SD1221

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−60

Collector-emitter voltage

Emitter-base voltage

Collector current

−7

−3

Base current

−0.5

1.0

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

TOSHIBA

2-7J1A

Storage temperature range

stg

−55 to 150

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Start of commercial production

1985-11

2013-11-01

12 3 4

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