Datasheet > 2SB772Q

2SB772Q

更新时间： 2024-11-20 06:25:55

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	81K
描述
PNP Silicon Medium Power Transistor

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技术参数
数据手册

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2SB772Q 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.59	Base Number Matches：	1

2SB772Q 数据手册

2SB772Q

PNP Silicon

Elektronische Bauelemente

Medium Power Transistor

RoHS Compliant Product

SOT-89

FEATURES

Power dissipation

ꢀ

ꢁ

ꢀ

ꢂ

ꢃ

ꢀ

P _CM: 500mW˄Tamb=25ć˅

1.BASE

Collector current

2.COLLECTOR

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

Min

Max

: -3

ICM

3.EMITTER

1.400

0.320

0.360

0.350

4.400

1.400

2.300

3.940

1.600

0.520

0.560

0.440

4.600

1.800

2.600

4.250

0.055

0.013

0.014

0.173

0.055

0.091

0.155

0.063

0.020

0.022

0.017

0.181

0.071

0.102

0.167

Collector-base voltage

_VB(BR)CBO: -40

Operating and storage junction temperature range

_TJˈT_stg: -55ć to +150ć

1.500TYP

0.060TYP

2.900

0.900

3.100

1.100

0.114

0.035

0.122

0.043

ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅

CLASSIFICATION OF h_FE(1)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic=-100A ˈI_E=0

I_C= -10 mA , I_B=0

I_E= -100 AˈI_C=0

V_CB= -40 V , I_E=0

V_CE=-30 V , I_B=0

MIN

-40

-30

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-1

-10

-1

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

V_EB=-6V ,

I_C=0

_CE= -2V, I_C= -1A

_CE=-2V, I_C= -100mA

h_FE

400

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=-2A, I_B= -0.2A

-0.5

-1.5

I_C=-2A, I_B= -0.2A

V_CE= -5V, I_C=-0.1A

Transition frequency

MHz

f _T

f = 10MHz

CLASSIFICATION OF h^FE

(1)

Rank

Range

60-120

100-200

160-320

200-400

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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