2SB772S

更新时间： 2024-11-17 22:49:27

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
2页	28K
描述
MEDIUM POWER LOW VOLTAGE TRANSISTOR

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中文翻译

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数据手册

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2SB772S 数据手册

UTC2SB772S

PNP EPITAXIAL SILICON TRANSISTOR

MEDIUM POWER LOW VOLTAGE

TRANSISTOR

DESCRIPTION

The UTC 2SB772S is

a medium power low voltage

transistor, designed for audio power amplifier, DC-DC

converter and voltage regulator.

FEATURES

*High current output up to 3A

*Low saturation voltage

*Complement to 2SD882S

TO-92

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

-40

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Dissipation( Tc=25°C)

Collector Dissipation( Ta=25°C)

Collector Current(DC)

Collector Current(PULSE)

Base Current

-3

-7

-0.6

Junction Temperature

Storage Temperature

150

°C

TSTG

-55 ~ +150

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain(note 1)

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

ICBO

VCB=-30V,IE=0

-1000

IEBO

VEB=-3V,Ic=0

hFE1

hFE2

VCE=-2V,Ic=-20mA

VCE=-2V,Ic=-1A

100

200

150

-0.3

-1.0

400

-0.5

-2.0

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

VCE(sat)

VBE(sat)

Ic=-2A,IB=-0.2A

VCE=-5V,Ic=-0.1A

VCB=-10V,IE=0,f=1MHz

MHz

Cob

Note 1:Pulse test:PW<300ms,Duty Cycle<2%

CLASSIFICATION OF hFE

RANK

RANGE

100-200

160-320

200-400

UTC UNISONIC TECHNOLOGIES CO. LTD

中文翻译

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