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2SB772-R-B PDF预览

2SB772-R-B

更新时间: 2024-11-19 08:57:03
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 77K
描述
Transistor

2SB772-R-B 数据手册

 浏览型号2SB772-R-B的Datasheet PDF文件第2页 
2SB772  
2SB772-R  
2SB772-O  
2SB772-Y  
2SB772-GR  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
x
Capable of 1.25Watts of Power Dissipation.  
Collector-current 3.0A  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
ꢀꢁꢂꢃꢄꢅ  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
A
K
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
I CBO  
Collector-Emitter Breakdown Voltage  
30  
40  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
D
(I =10mAdc, I =0)  
C
B
Collector-Base Breakdown Voltage  
(I C=100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(I E=100uAdc, IC=0)  
Collector Cutoff Current  
(V CB=40Vdc, IE=0)  
Collector Cutoff Current  
(V CE=30Vdc, IB=0)  
R
E
B
---  
Vdc  
1.0  
1.0  
1.0  
uAdc  
uAdc  
uAdc  
N
P
ICEO  
M
F
G
IEBO  
Emitter Cutoff Current  
L
(V EB=6.0Vdc, I =0)  
C
H
C
ON CHARACTERISTICS  
h FE(1)  
DC Current Gain  
(I =1.0Adc, VCE=2.0Vdc)  
DC Current Gain  
60  
32  
---  
400  
---  
---  
C
h FE(2)  
1
2
3
(I =100mAdc, VCE=2.0Vdc)  
---  
C
V CE(sat)  
V BE(sat)  
Collector-Emitter Saturation Voltage  
(I C=2.0Adc, IB=0.2Adc)  
Base-Emitter Saturation Voltage  
(I C=2.0Adc, IB=0.2Adc)  
J
J
Q
0.5  
2.0  
Vdc  
Vdc  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
---  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
SMALL-SIGNAL CHARACTERISTICS  
ꢁꢄꢇꢈꢃꢅꢉ  
ꢂꢁꢄꢉ  
ꢍꢎꢏꢍꢉ  
ꢂꢂꢉ  
f T  
Transistor Frequency  
ꢀꢁꢂꢉ  
ꢊꢉ  
ꢒꢉ  
ꢇꢉ  
ꢀꢉ  
ꢃꢉ  
ꢘꢉ  
ꢂꢊꢋꢉ  
ꢍꢎꢏꢏꢉ  
ꢍꢎꢓꢔꢉ  
ꢍꢎꢓꢏꢉ  
ꢍꢎꢕꢔꢉ  
ꢍꢎꢕꢏꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢍꢐꢉ  
ꢍꢎꢍꢏꢏꢉ  
ꢍꢎꢕꢍꢉ  
ꢍꢎꢕꢖꢉ  
ꢍꢎꢔꢖꢉ  
ꢍꢎꢍꢖꢉ  
ꢍꢎꢍꢗ  
ꢂꢁꢄꢉ  
ꢐꢎꢐꢍꢉ  
ꢂꢊꢋꢉ  
ꢄꢆꢌꢃꢉ  
ꢉꢉ  
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz)  
50  
---  
MHz  
ꢑꢎꢏꢍ  
ꢕꢖꢎꢗꢍ  
ꢕꢏꢎꢏꢔꢉ  
ꢖꢎꢍ  
ꢍꢎꢓꢍꢉ  
ꢍꢎꢕꢓꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢗꢓꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢕꢗꢉ  
ꢍꢎꢔꢏꢉ  
ꢕꢗꢎꢐꢔꢉ  
ꢏꢎꢑꢍꢉ  
ꢏꢎꢕꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢕꢎꢓꢍꢉ  
ꢍꢎꢔꢓꢉ  
ꢗꢎꢍꢑꢉ  
ꢏꢎꢍꢓꢉ  
ꢕꢓꢎꢝꢍꢉ  
ꢏꢎꢏꢍ  
ꢍꢎꢑꢓ  
ꢕꢎꢐꢍ  
ꢍꢎꢑꢓ  
ꢗꢎꢖꢑ  
ꢏꢎꢖꢓ  
ꢕꢔꢎꢏꢍ  
ꢕꢎꢍ  
ꢙꢉ  
ꢈꢉ  
ꢚꢉ  
CLASSIFICATION OF HFE (1)  
Rank  
R
O
Y
GR  
200-400  
ꢛꢉ  
ꢜꢉ  
Range  
60-120  
100-200  
160-320  
ꢂꢉ  
ꢍꢎꢓ  
ꢞꢉ  
 ꢉ  
!ꢉ  
ꢍꢎꢍꢔꢉ  
ꢍꢎꢍꢕꢑꢉ  
ꢍꢎꢖꢏꢉ  
ꢍꢎꢍꢑꢉ  
ꢍꢎꢍꢗꢏꢉ  
ꢍꢎꢖꢖꢉ  
ꢕꢎꢓꢓꢉ  
ꢍꢎꢖꢓꢉ  
ꢕꢎꢝꢓ  
ꢍꢎꢔꢍ  
ꢕꢕꢎꢗꢍ  
ꢕꢍꢎꢑꢍꢉ  
www.mccsemi.com  
1 of 2  
Revision: 4  
2007/03/01  

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