2SB772
2SB772-R
2SB772-O
2SB772-Y
2SB772-GR
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
PNP Silicon
Plastic-Encapsulate
Transistor
•
•
•
•
x
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
ꢀꢁꢂꢃꢄꢅ
Electrical Characteristics @ 25OC Unless Otherwise Specified
A
K
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
Collector-Emitter Breakdown Voltage
30
40
5.0
---
---
---
---
---
Vdc
Vdc
D
(I =10mAdc, I =0)
C
B
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
Collector Cutoff Current
(V CB=40Vdc, IE=0)
Collector Cutoff Current
(V CE=30Vdc, IB=0)
R
E
B
---
Vdc
1.0
1.0
1.0
uAdc
uAdc
uAdc
N
P
ICEO
M
F
G
IEBO
Emitter Cutoff Current
L
(V EB=6.0Vdc, I =0)
C
H
C
ON CHARACTERISTICS
h FE(1)
DC Current Gain
(I =1.0Adc, VCE=2.0Vdc)
DC Current Gain
60
32
---
400
---
---
C
h FE(2)
1
2
3
(I =100mAdc, VCE=2.0Vdc)
---
C
V CE(sat)
V BE(sat)
Collector-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
Base-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc)
J
J
Q
0.5
2.0
Vdc
Vdc
PIN 1.
PIN 2.
PIN 3.
EMITTER
COLLECTOR
BASE
---
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
SMALL-SIGNAL CHARACTERISTICS
ꢁꢄꢇꢈꢃꢅꢉ
ꢂꢁꢄꢉ
ꢍꢎꢏꢍꢉ
ꢉ
ꢂꢂꢉ
f T
Transistor Frequency
ꢀꢁꢂꢉ
ꢊꢉ
ꢒꢉ
ꢇꢉ
ꢀꢉ
ꢃꢉ
ꢘꢉ
ꢂꢊꢋꢉ
ꢍꢎꢏꢏꢉ
ꢍꢎꢓꢔꢉ
ꢍꢎꢓꢏꢉ
ꢍꢎꢕꢔꢉ
ꢍꢎꢕꢏꢉ
ꢍꢎꢍꢏꢏꢉ
ꢍꢎꢍꢐꢉ
ꢍꢎꢍꢏꢏꢉ
ꢍꢎꢕꢍꢉ
ꢍꢎꢕꢖꢉ
ꢍꢎꢔꢖꢉ
ꢍꢎꢍꢖꢉ
ꢍꢎꢍꢗ
ꢂꢁꢄꢉ
ꢐꢎꢐꢍꢉ
ꢉ
ꢂꢊꢋꢉ
ꢄꢆꢌꢃꢉ
ꢉꢉ
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz)
50
---
MHz
ꢑꢎꢏꢍ
ꢕꢖꢎꢗꢍ
ꢕꢏꢎꢏꢔꢉ
ꢖꢎꢍ
ꢍꢎꢓꢍꢉ
ꢍꢎꢕꢓꢉ
ꢍꢎꢕꢗꢉ
ꢍꢎꢍꢗꢓꢉ
ꢍꢎꢍꢔꢉ
ꢍꢎꢍꢗꢓꢉ
ꢍꢎꢍꢑꢉ
ꢍꢎꢕꢗꢉ
ꢍꢎꢔꢏꢉ
ꢉ
ꢕꢗꢎꢐꢔꢉ
ꢏꢎꢑꢍꢉ
ꢏꢎꢕꢍꢉ
ꢍꢎꢔꢓꢉ
ꢕꢎꢓꢍꢉ
ꢍꢎꢔꢓꢉ
ꢗꢎꢍꢑꢉ
ꢏꢎꢍꢓꢉ
ꢕꢓꢎꢝꢍꢉ
ꢉ
ꢏꢎꢏꢍ
ꢍꢎꢑꢓ
ꢕꢎꢐꢍ
ꢍꢎꢑꢓ
ꢗꢎꢖꢑ
ꢏꢎꢖꢓ
ꢕꢔꢎꢏꢍ
ꢕꢎꢍ
ꢙꢉ
ꢈꢉ
ꢚꢉ
CLASSIFICATION OF HFE (1)
Rank
R
O
Y
GR
200-400
ꢛꢉ
ꢜꢉ
Range
60-120
100-200
160-320
ꢂꢉ
ꢄ
ꢍꢎꢓ
ꢞꢉ
ꢉ
!ꢉ
ꢍꢎꢍꢔꢉ
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ꢍꢎꢍꢑꢉ
ꢍꢎꢍꢗꢏꢉ
ꢍꢎꢖꢖꢉ
ꢕꢎꢓꢓꢉ
ꢍꢎꢖꢓꢉ
ꢕꢎꢝꢓ
ꢍꢎꢔꢍ
ꢕꢕꢎꢗꢍ
ꢕꢍꢎꢑꢍꢉ
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Revision: 4
2007/03/01