Datasheet > 2SB772S

2SB772S

更新时间： 2024-09-24 14:54:15

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	246K
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小信号晶体管

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2SB772S 数据手册

2SB772S

PNP Silicon Epitaxial Transistor

Features

• The transistor is subdivided into three groups

Q, P and E, according to its DC current gain

• On special request, these transistors can be

manufactured in different pin configurations

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Applications

• Medium Power Low Voltage Transistor

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-I_CM

Peak Collector Current

Base Current

600

-I_B

P_tot

Collector Dissipation

Junction Temperature

Storage Temperature Range

500

T_j

150

℃

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

250

Unit

Thermal Resistance from Junction to Ambient

℃/W

1 / 5

Dated: 14/11/2022 Rev: 02

12 3 4 5

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